| Autor: |
Benjamin V. Shanabrook, W. Barvosa-Carter, Robert Bass, Brian R. Bennett, J. B. Boos, William W. Bewley, Allan S. Bracker, James C. Culbertson, E. R. Glaser, Walter Kruppa, R. Magno, W. J. Moore, Jerry R. Meyer, B. Z. Nosho, Doewon Park, P. M. Thibado, M. E. Twigg, R. J. Wagner, James R. Waterman, Lloyd J. Whitman, Ming J. Yang |
| Rok vydání: |
1999 |
| Předmět: |
|
| Zdroj: |
Engineered Nanostructural Films and Materials. |
| ISSN: |
0277-786X |
| Popis: |
Heterostructures formed from III-V semiconductors with the 6.1 angstroms lattice spacing (InAs, GaSb, AlSb and related alloys) have attracted significant interest because of their potential to define a new `state of the art' in applications including 100 GHz high-speed logic circuits, terahertz transistors, sensitive infrared detectors and mid-infrared semiconductor lasers. In this paper, we describe the ongoing work at the Naval Research Laboratory to develop the materials growth and fabrication technology for a variety of 6.1 angstroms-based devices which have the potential to revolutionize infrared optoelectronics and low-power, high- speed electronics. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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