1/ƒ noise measurements of bonded SOS and Epi SOS fully-depleted MOSFETs to 10 MHz

Autor:	F.M. Rotella, L.-W. Chen, J.W. Roach
Rok vydání:	2011
Předmět:	Materials science Noise measurement Silicon business.industry chemistry.chemical_element Epitaxial silicon Epitaxy chemistry Logic gate MOSFET Sapphire Optoelectronics business Noise (radio)
Zdroj:	IEEE 2011 International SOI Conference.
DOI:	10.1109/soi.2011.6081692
Popis:	1/ƒ noise measured up to a frequency of 10 MHz is compared for fully depleted MOSFETS on epitaxial silicon grown directly on sapphire and silicon bonded to sapphire for 0.35 um technology.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d9c0fe757308e74caece3f6b4284e012 https://doi.org/10.1109/soi.2011.6081692 Zobrazit plný text záznamu