The effects of magnetic field on the energy levels of shallow donor impurities in GaAs/AlxGa1−x as quantum dots

Autor: P.C.M. Machado, Francisco A. P. Osório, Adriana Brito Aguiar Marques, A. N. Borges
Rok vydání: 2005
Předmět:
Zdroj: Microelectronics Journal. 36:244-246
ISSN: 0026-2692
Popis: In the present work, we report a calculation of the electron energy levels (1s,2p−,2p+) and the binding energies of a shallow impurity placed in the center of a circular quantum dot of a GaAs surrounded by AlGaAs in the presence of a uniform magnetic field applied perpendicularly to the plane of the dot. We also present results for the 1s−2p+ transition energy as a function of the magnetic field.
Databáze: OpenAIRE