The effects of magnetic field on the energy levels of shallow donor impurities in GaAs/AlxGa1−x as quantum dots
Autor: | P.C.M. Machado, Francisco A. P. Osório, Adriana Brito Aguiar Marques, A. N. Borges |
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Rok vydání: | 2005 |
Předmět: | |
Zdroj: | Microelectronics Journal. 36:244-246 |
ISSN: | 0026-2692 |
Popis: | In the present work, we report a calculation of the electron energy levels (1s,2p−,2p+) and the binding energies of a shallow impurity placed in the center of a circular quantum dot of a GaAs surrounded by AlGaAs in the presence of a uniform magnetic field applied perpendicularly to the plane of the dot. We also present results for the 1s−2p+ transition energy as a function of the magnetic field. |
Databáze: | OpenAIRE |
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