Ultra-High Density, Thin-Film Tantalum Capacitors with Improved Frequency Characteristics for MHz Switching Power Converters
Autor: | Himani Sharma, Holger Brumm, Saumya Gandhi, Rao Tummala, Naomi Lollis, Mitch Weaver, Markondeya Raj Pulugurtha, Robert Grant Spurney, Matthew D. Romig |
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Rok vydání: | 2018 |
Předmět: |
Tantalum capacitor
Materials science Tantalum chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY 02 engineering and technology 010402 general chemistry 01 natural sciences law.invention Hardware_GENERAL law Hardware_INTEGRATEDCIRCUITS Materials Chemistry Miniaturization Electrical and Electronic Engineering High-κ dielectric Equivalent series resistance business.industry Converters 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Electronic Optical and Magnetic Materials Capacitor chemistry visual_art Electronic component visual_art.visual_art_medium Optoelectronics 0210 nano-technology business |
Zdroj: | Journal of Electronic Materials. 47:5632-5639 |
ISSN: | 1543-186X 0361-5235 |
DOI: | 10.1007/s11664-018-6466-4 |
Popis: | High-density passive components are needed for continued miniaturization of complex high-performance electronic systems. Tantalum (Ta) capacitors provide some of the highest volumetric densities achieved due to their combination of high-surface area and relatively high dielectric constant, but suffer from low frequency stability and large form-factors due to the electrode design. In this paper, a printed thin-film tantalum capacitor design is presented. Tantalum capacitor arrays of 1 μF/mm2 up to and beyond 1 MHz. The improved frequency stability comes from the ultra-thin structure of the capacitors, which reduces the path length of the charging and discharging current. The capacitors showed low equivalent series resistance and consistent electrical performance before and after thermal moisture testing at 65°C and 95% relative humidity for 500 h and 1000 h. Due to the ultra-low form-factor, the thin-film Ta capacitor technology can be extended to highly-miniaturized power converters with efficient substrate- or wafer-scale integration. |
Databáze: | OpenAIRE |
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