Novel approach to passivation of InAs/GaSb type II superlattice photodetectors
| Autor: | Tomasz Martyński, Andrzej Łapiński, Jarosław Makowiecki, Iwona Sankowska, E. Papis-Polakowska, Krzysztof Czuba, J. Kaniewski, P. Karbownik, Agata Jasik, Tomasz Runka |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Passivation business.industry Silicon dioxide Superlattice General Engineering General Physics and Astronomy Photodetector 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Contact angle chemistry.chemical_compound symbols.namesake chemistry 0103 physical sciences Monolayer symbols Optoelectronics 0210 nano-technology business Raman spectroscopy Dark current |
| Zdroj: | Applied Physics B. 125 |
| ISSN: | 1432-0649 0946-2171 |
| DOI: | 10.1007/s00340-019-7336-3 |
| Popis: | The innovative two-step passivation by octadecanethiol (ODT) self-assembled monolayers (SAMs) and the following silicon dioxide (SiO2) deposition was used for the type-II InAs/GaSb superlattice photodetector. To understand the mechanism of passivation, the (100) GaSb surface covered with the ODT and, for comparison, with the biphenyl thiol (BPT), was characterized by the atomic force microscopy, Raman spectroscopy and contact angle analysis. The results of the study indicated the presence of the homogeneous both the ODT and the BPT monolayers; however, the ODT SAMs were more stable. Therefore, the ODT-based wet treatment was used in the two-step passivation resulting in a reduction of the dark current by one order of magnitude for passivated detector compared with an unpassivated device. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink