Stress in low-temperature plasma enhanced chemical vapour deposited silicon nitride thin films
| Autor: | Lorenzo Faraone, Mariusz Martyniuk, Charles Musca, John Dell, Jarek Antoszewski |
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| Rok vydání: | 2005 |
| Předmět: |
Materials science
Substrate (electronics) Condensed Matter Physics Atomic and Molecular Physics and Optics Stress (mechanics) chemistry.chemical_compound Silicon nitride chemistry Mechanics of Materials Residual stress Plasma-enhanced chemical vapor deposition Signal Processing Deposition (phase transition) General Materials Science Electrical and Electronic Engineering Deformation (engineering) Thin film Composite material Civil and Structural Engineering |
| Zdroj: | Smart Materials and Structures. 15:S29-S38 |
| ISSN: | 1361-665X 0964-1726 |
| DOI: | 10.1088/0964-1726/15/1/006 |
| Popis: | Two experimental techniques have been investigated to examine residual stress in low-temperature plasma enhanced chemical vapour deposited (PECVD) SiNx thin films: one that measures the stress-induced substrate curvature, and the other that takes advantage of the stress-induced deformation of freestanding diagnostic microstructures. A general linear dependence of residual stress on SiNx deposition temperature is observed, with the magnitude of stress changing linearly from ~300 MPa tensile stress to ~600 MPa compressive stress as the deposition temperature is decreased from 300 to 100 °C. However, the results deviate from the linear dependence by a different degree for both measurement techniques at low deposition temperatures. The stress values obtained via the substrate curvature method deviate from the linear dependence for deposition temperatures below 200 °C, whereas the values obtained via the diagnostic microstructures method deviate from the linear dependence for deposition temperatures below 100 °C. Stress uniformity over the deposition area is also investigated. |
| Databáze: | OpenAIRE |
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