| Autor: |
Y. K. Lim, W. Liu, Eng Chye Chua, X. Zeng, J. F. Liu, W. Y. Zhang |
| Rok vydání: |
2010 |
| Předmět: |
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| Zdroj: |
2010 IEEE International Reliability Physics Symposium. |
| DOI: |
10.1109/irps.2010.5488703 |
| Popis: |
Effect of backend interconnect critical dimension variation on IMD TDDB is studied. Statistical data shows that low-k dielectric TDDB time to failure correlates well with leakage current, which reflects actual trench-to-trench or trench-to-via spacing. So a lifetime projection method, based on equal electric field, is reported. A more realistic lifetime is achieved while predicting whole lot TDDB life-time. Moreover, monitoring leakage current could be adopted into process monitoring strategy. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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