Scattering Parameter Analysis of Gate Stack Gate All Around (GS-GAA) FinFET at THz for RF Applications

Autor: Bhavya Kumar, Megha Sharma, Rishu Chaujar
Rok vydání: 2022
Zdroj: 2022 8th International Conference on Signal Processing and Communication (ICSC).
DOI: 10.1109/icsc56524.2022.10009615
Databáze: OpenAIRE