An InGaN/GaN MQWs Solar Cell Improved By a Surficial GaN Nanostructure as Light Traps
| Autor: | Jincheng Zhang, Yiping Zhan, Jinfeng Zhang, Du Fengyu, Peixian Li, Zhen Bi, Daniel Bacon-Brown, Yue Hao, Shengrui Xu |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Nanostructure Photoluminescence Materials science business.industry Energy conversion efficiency Gallium nitride 02 engineering and technology Photoelectric effect 021001 nanoscience & nanotechnology 01 natural sciences Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry law 0103 physical sciences Solar cell Nano Optoelectronics Electrical and Electronic Engineering 0210 nano-technology Absorption (electromagnetic radiation) business |
| Zdroj: | IEEE Photonics Technology Letters. 30:83-86 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/lpt.2017.2775706 |
| Popis: | The InGaN/GaN multi-quantum-wells (MQWs) solar cells employing the surficial GaN nanostructure as light traps were investigated. The performance of the InGaN/GaN MQWs solar cell with nano holes surface shows an obvious advantage over that with nano poles, much less than the planar one. From the measurements of EQE and photoluminescence spectra, the enhancement of photoelectric response contributes to the device performances. Because the effective light absorption is increased, the conversion efficiency significantly improves from 1.02% (planar surface) up to 2.235% (nano holes surface). Although the performance is still low, it is exactly an effective method to enhance the conversion efficiency via introducing nanostructures on the surface of the InGaN/GaN MQWs cells. |
| Databáze: | OpenAIRE |
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