Proton irradiation effects on the intersubband transition in GaAs/AlGaAs multiple quantum wells with bulk or superlattice barriers
| Autor: | Gregory J. Salamo, M. O. Manasreh, J. B. Smathers, P. Ballet, Chennupati Jagadish |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Condensed matter physics Proton Silicon Condensed Matter::Other business.industry Superlattice Multiple quantum digestive oral and skin physiology Infrared spectroscopy chemistry.chemical_element Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Gallium arsenide chemistry.chemical_compound Semiconductor chemistry Irradiation business |
| Zdroj: | Applied Physics Letters. 75:525-527 |
| ISSN: | 1077-3118 0003-6951 |
| DOI: | 10.1063/1.124436 |
| Popis: | The optical absorption spectra, measured at either 77 or 300 K, of the intersubband transition in Si-doped GaAs/AlGaAs multiple quantum wells were studied before and after 1 MeV proton irradiation. The intersubband transition in samples with superlattice barriers was completely washed out after irradiation with doses as low as 1.0×1014 cm−2. The total integrated areas of the intersubband transitions were studied as a function of doses. It was observed that the intersubband transitions in samples with superlattice barriers degrade at a faster rate as compared to those transitions in samples with bulk barriers. |
| Databáze: | OpenAIRE |
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