| Popis: |
Plasma immersion ion implantation applies a series of negative high‐voltage pulses to a target immersed in a plasma. An analytical model of the currents and potentials induced before, during, and after the negative bias in a planar geometry is presented. The effect of multiple pulses on the results is also studied. The model determines the time‐varying ion current, electron current, total current, total dose, and sheath thickness for a piecewise linear voltage pulse. The sheath collapse is found to be important for high repetition rate pulses. Implementation of the model is done in SPICE, a circuit simulator. Comparison with experimental data has demonstrated the accuracy of the model. |
