Stability of AlGaN/GaN heterostructures after hydrogen plasma treatment
| Autor: | Andrej Vincze, Tibor Lalinský, J. Dzuba, Gabriel Vanko, Oleg Babchenko, Tibor Ižák, Marian Vojs |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Scanning electron microscope Schottky barrier Analytical chemistry General Physics and Astronomy 02 engineering and technology High-electron-mobility transistor engineering.material 01 natural sciences 0103 physical sciences Sheet resistance 010302 applied physics business.industry Diamond Heterojunction Surfaces and Interfaces General Chemistry Plasma 021001 nanoscience & nanotechnology Condensed Matter Physics Surfaces Coatings and Films Secondary ion mass spectrometry engineering Optoelectronics 0210 nano-technology business |
| Zdroj: | Applied Surface Science. 395:92-97 |
| ISSN: | 0169-4332 |
| DOI: | 10.1016/j.apsusc.2016.06.105 |
| Popis: | We report on the investigation of low temperature (300 °C) hydrogen plasma treatment influence on the AlGaN/GaN heterostructures. This issue was raised in the frame of study on processes related to hybrid integration of diamond with GaN-based devices. At the same time, the capabilities of thin SiNx covering were investigated. The samples were exposed to low pressure hydrogen plasma ignited in the linear plasma system at low temperature. We analyze the surface morphology of samples by scanning electron microscopy while microstructural changes down to AlGaN/GaN interface were studied using secondary ion mass spectrometry. The sheet resistance, monitored using circular transmission line measurements, increases more than 3.5 times after 60 min treatment. The basic transport properties of the fabricated circular high electron mobility transistors after H2 plasma treatment were analyzed. The sheet resistance increasing was attributed to the decrease of effective mobility. Whilst, the observed Schottky barrier lowering indicates necessity of gate contact protection. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect