Tunable GaInP solar cell lattice matched to GaAs

Autor: Brandon G. Hagar, Islam Sayed, C. Zachary Carlin, Salah M. Bedair, Peter C. Colter
Rok vydání: 2015
Předmět:
Zdroj: 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).
DOI: 10.1109/pvsc.2015.7356081
Popis: A new strain-balanced multiple quantum well (MQW) approach to tune the Ga0.51In0.49P bandgap is demonstrated. This approach is based on Ga1−xInxP/Ga1−yInyP (x > y) or Ga1−xInxAszP1−z/Ga1−yInyP (x > y) structures, strain balanced and lattice matched to GaAs in a p-i-n solar cell structure. A red shift in the absorption edge and an increase in the short circuit current were observed. Carriers generated in quantum wells due to transitions between the quantum levels are transported across the barriers via thermionic emission. The proposed structure allows more flexibility in the design of current multi-junction solar cells and future cells with more than four junctions.
Databáze: OpenAIRE