Top and Split Gating Control of the Electrical Characteristics of a Two-dimensional Electron Gas in a LaAlO3/SrTiO3 Perovskite
| Autor: | Jonghyun Song, Jihwan Kim, Jinhee Kim, Yongsu Kwak |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
Josephson effect
Superconductivity Fabrication Materials science business.industry General Physics and Astronomy 02 engineering and technology 021001 nanoscience & nanotechnology Thermal conduction 01 natural sciences Computer Science::Hardware Architecture Computer Science::Emerging Technologies 0103 physical sciences Electrode Optoelectronics Field-effect transistor 010306 general physics 0210 nano-technology business Fermi gas Perovskite (structure) |
| Zdroj: | Journal of the Korean Physical Society. 72:925-929 |
| ISSN: | 1976-8524 0374-4884 |
| DOI: | 10.3938/jkps.72.925 |
| Popis: | A top gate field effect transistor was fabricated using polymethyl methacrylate (PMMA) as a gate insulator on a LaAlO3 (LAO)/SrTiO3 (STO) hetero-interface. It showed n-type behavior, and a depletion mode was observed at low temperature. The electronic properties of the 2-dimensional electron gas at the LAO/STO hetero-interface were not changed by covering LAO with PMMA following the Au top gate electrode. A split gate device was also fabricated to construct depletion mode by using a narrow constriction between the LAO/STO conduction interface. The depletion mode, as well as superconducting critical current, could be controlled by applying a split gate voltage. Noticeably, the superconducting critical current tended to decrease with decreasing the split gate voltage and finally became zero. These results indicate that a weak-linked Josephson junction can be constructed and destroyed by split gating. This observation opens the possibility of gate-voltage-adjustable quantum devices. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink