Leakage current analysis of diamond Schottky barrier diodes by defect imaging
| Autor: | Yukako Kato, Natsuo Tatsumi, Hitoshi Umezawa, Shinichi Shikata |
|---|---|
| Rok vydání: | 2013 |
| Předmět: |
Materials science
business.industry Mechanical Engineering Schottky barrier Diamond Schottky diode General Chemistry engineering.material SBDS Electronic Optical and Magnetic Materials Reverse leakage current Etch pit density Materials Chemistry engineering Optoelectronics Electrical and Electronic Engineering Dislocation business Diode |
| Zdroj: | Diamond and Related Materials. 40:56-59 |
| ISSN: | 0925-9635 |
| DOI: | 10.1016/j.diamond.2013.09.011 |
| Popis: | The leakage current of pseudo-vertical-type diamond Schottky barrier diodes (SBDs) was analyzed using a defect visualization technique. Even under a low electrical field, 50% of the fabricated diamond SBDs exhibited a high leakage current that cannot be explained by any of the carrier transport mechanisms through the Schottky barrier. The SBDs with high leakage current were confirmed to contain a high density of dislocations that are revealed as deep etch pits by H2/CO2 plasma treatment. The maximum operation voltage of the SBDs is clearly dependent on the number of deep etch pits. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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