Modified Conductance Method for Extraction of Subgap Density of States in a-IGZO Thin-Film Transistors

Autor:	Sungwoo Jun, Hyunjun Choi, Dae Hwan Kim, Woojoon Kim, Inseok Hur, Euiyeon Hong, Jaewook Lee, Choon Hyeong Jo, Yun Hyeok Kim, Seonwook Hwang, Dong Myong Kim, Hagyoul Bae, Hyojoon Seo, Daeyoun Yun, Hyun Kwang Jeong
Rok vydání:	2012
Předmět:	Free electron model Materials science Band gap Analytical chemistry Oxide Conductance Molecular physics Capacitance Electronic Optical and Magnetic Materials Amorphous solid chemistry.chemical_compound chemistry Thin-film transistor Density of states Electrical and Electronic Engineering
Zdroj:	IEEE Electron Device Letters. 33:1138-1140
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2012.2198870
Popis:	We propose a modified conductance method for extraction of the subgap density of states (DOS) in amorphous indium-gallium-zinc oxide thin-film transistors by using the measured capacitance and conductance through the capacitance-voltage (C-V) measurement. In the proposed method, the subgap DOS [gA(E)] is extracted from the frequency-dispersive C-V characteristics by localized traps in the active channel region. The extracted gA(E) shows a superposition of the exponential tail states and the exponential deep states over the bandgap (NTA = 3 × 1018 cm-3 · eV-1, NDA = 2.8 × 1017 cm-3 · eV-1, kTTA = 0.04 eV, and kTDA = 0.77 eV). We note that the gate-bias-dependent Cfree by free electron charges can be separated from Cloc by localized trap charges through the proposed method.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d9574a7778647cf956b3eb8ebf5db3bd https://doi.org/10.1109/led.2012.2198870 Zobrazit plný text záznamu