| Popis: |
In this work we focus our attention on the growth and development of low Miller index faces on patterned InP substrates for the InGaAs InP system. In particular, we present an extensive study about the dependence of growth rate and facet development on the key parameters of chemical beam epitaxy (CBE) growth. The main results obtained on ridge structures, V-grooves and reverse-mesa channels are reported and discussed as a function of growth temperature and V III ratio. Moreover, we describe a simple measurement procedure for both hydride and metalorganic fluxes, not involving conventional ionisation methods. |
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