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Publisher Summary This chapter examines the various aspects of antimony trisulfide heterojunction vidicon structure. Antimony trisulfide has been extensively used as the photoconductive material in vidicons, and it has also been used in heterojunction structures as a nonphotosensitive element. The presence of emission limited contacts to Sb 2 S 3 , and the requirements of a useful heterojunction vidicon target are established. It is demonstrated that a properly designed junction can reduce the dark current arising from electron injection without affecting other photoconductive characteristics. The use of a heterojunction structure to ensure the absence of ohmic or quasiohmic contacts relaxes the inherent restriction imposed on the resistivity of the Sb 2 S 3 . The electrical contact and photoconductive characteristics were found. It was demonstrated that a properly designed junction can reduce the dark current arising from electron injection without affecting other photoconductive characteristics. It is found that such a reduction of dark current permits operation at higher applied fields, which in turn, yield a sensitivity approaching a quantum yield of unity for the peak response wavelength. |
