Low-field ac-susceptibility study of flux creep in metal-substitutedErBa2Cu3O7−δ
| Autor: | A. V. Narlikar, Ratan Lal, B. V. Kumaraswamy |
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| Rok vydání: | 1995 |
| Předmět: | |
| Zdroj: | Physical Review B. 52:1320-1324 |
| ISSN: | 1095-3795 0163-1829 |
| DOI: | 10.1103/physrevb.52.1320 |
| Popis: | Low-field ac-susceptibility studies of pure ${\mathrm{ErBa}}_{2}$${\mathrm{Cu}}_{3}$${\mathrm{O}}_{7\mathrm{\ensuremath{-}}\mathrm{\ensuremath{\delta}}}$ and substituted samples of ${\mathrm{ErBa}}_{2}$(${\mathrm{Cu}}_{0.995}$${\mathit{M}}_{0.005}$${)}_{3}$${\mathrm{O}}_{7\mathrm{\ensuremath{-}}\mathrm{\ensuremath{\delta}}}$ (M=Fe, Co, Ni, Ga) have been carried out in the frequency range up to 1 kHz. The activation energy for flux creep in the case of the doped samples is considerably lower than that for the undoped sample. The analysis of the results within the framework of M\"uller's model [Physica C 159, 717 (1989); 168, 585 (1990)] shows that the intergrain critical current density gets considerably suppressed by the dopants. Employing a SIS junction model it is argued that this can be attributed to the reduction in the Fermi energy of the system due to the localization caused by the presence of the dopant atoms. |
| Databáze: | OpenAIRE |
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