Ultrahigh-sensitive AlGaAs-GaAs punchthrough heterojunction phototransistor
| Autor: | Yan Feng, Han Dejun, Li Guohui, En-Jun Zhu |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Materials science
business.industry Physics::Optics Photodetector Optical power Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Gallium arsenide chemistry.chemical_compound Algaas gaas chemistry Heterojunction phototransistor Optoelectronics Electrical and Electronic Engineering business Sensitivity (electronics) Recombination current Common emitter |
| Zdroj: | IEEE Photonics Technology Letters. 9:1391-1393 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/68.623273 |
| Popis: | An avalanche enhanced AlGaAs-GaAs punchthrough heterojunction phototransistor with an improved guard-ring emitter structure has been proposed. It has demonstrated a record high sensitivity of 5790 A/W and optical conversion gain of 10810 at 400-nW incident optical power level. Its novel guard-ring emitter structure can suppress peripheral recombination current more effectively, provide capability to enhance and tune the optical conversion gain at low-incident optical power and reduce the effective emitter area. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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