New method to isolate and distribute photoluminescence emissions from InAs quantum dots over a wide-wavelength range
| Autor: | S. Ohkouchi, Yuichi Igarashi, Shinichi Yorozu, Satoshi Iwamoto, Naoto Kumagai, Masayuki Shirane, Masahiro Nomura, Yasutomo Ota, Yasuhiko Arakawa |
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| Rok vydání: | 2011 |
| Předmět: |
Nanostructure
Photon Photoluminescence Materials science Condensed Matter::Other Wavelength range Annealing (metallurgy) business.industry Physics::Optics Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Inorganic Chemistry Condensed Matter::Materials Science Wavelength Quantum dot Materials Chemistry Optoelectronics business Molecular beam epitaxy |
| Zdroj: | Journal of Crystal Growth. 323:250-253 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/j.jcrysgro.2010.12.026 |
| Popis: | We propose a new method to isolate and distribute the photoluminescence emission wavelengths of InAs quantum dots (QDs) over a wide-wavelength range by the growth of the partial GaAs capping layer at low temperature and annealing processes. When the partial capping layer was grown at 485 °C, the emission wavelengths of the QDs were distributed within a small range around the mean wavelength. On the other hand, when the partial capping layer was grown at a lower temperature of 423 °C, the emission wavelengths of the individual QDs were isolated and distributed over a wide range. Thus fabricated QDs are effective for the QD based devices such as single photon sources. |
| Databáze: | OpenAIRE |
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