The mercury pressure dependence of arsenic doping in HgCdTe, grown by organometallic epitaxy (direct alloy growth process)
| Autor: | Sorab K. Ghandhi, K. K. Parat, N. R. Taskar, G.J. Scilla, Ishwara B. Bhat |
|---|---|
| Rok vydání: | 1991 |
| Předmět: |
inorganic chemicals
chemistry.chemical_classification Inorganic chemistry Doping technology industry and agriculture chemistry.chemical_element Partial pressure Condensed Matter Physics Epitaxy Acceptor Inorganic Chemistry Secondary ion mass spectrometry chemistry.chemical_compound Arsine chemistry Materials Chemistry human activities Inorganic compound Arsenic |
| Zdroj: | Journal of Crystal Growth. 110:692-696 |
| ISSN: | 0022-0248 |
| DOI: | 10.1016/0022-0248(91)90625-f |
| Popis: | The effect of Hg partial pressure on arsenic doping of HgCdTe is studied. It is found that control of Hg partial pressure is very important in obtaining reproducible doping, and use of high Hg pressure is the key to obtain heavily doped layers. Typically, a factor of 4 increase in the partial pressure of Hg is found to increase the acceptor concentration by about this same magnitude. In addition, arsine doping results in almost uncompensated layers, even though high concentration of Hg vacancies are present. A mechanism is proposed by which As is incorporated as a Cd-As complex, so that it substitutes preferentially on Te sites. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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