Sol-gel TiO/sub 2/(La) films as gate dielectric in MOS structures

Autor:	Mariuca Gartner, C. Parlog, E. Kaedjiiska, A. Szekeres, S. Simeonov
Rok vydání:	2002
Předmět:	Permittivity Materials science Gate dielectric Doping technology industry and agriculture Oxide Analytical chemistry Relative permittivity Dielectric chemistry.chemical_compound chemistry Electronic engineering Atomic ratio Sol-gel
Zdroj:	1998 International Semiconductor Conference. CAS'98 Proceedings (Cat. No.98TH8351).
DOI:	10.1109/smicnd.1998.732350
Popis:	1 MHz C-V and G-V characteristics of undoped and doped with La TiO/sub 2/ films prepared by sol-gel technique were measured. It was found that low concentration of La in TiO/sub 2/ leads to an increase of the dielectric permittivity and a decrease of the oxide conductance. The average density of oxide defects increases with increasing the doping concentration. La/Ti atomic ratio of 0.22 results in a dramatic decrease of permittivity and in a strong generation of acceptor-like defects.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d9283a3af4bf161e589c61e8428f5041 https://doi.org/10.1109/smicnd.1998.732350 Zobrazit plný text záznamu