Comparison of GaAs/AlGaAs quantum-well IR detectors fabricated on GaAs and Si substrates
| Autor: | George W. Turner, F. W. Smith, K. Alexander McIntosh, Elliott R. Brown, Michael J. Manfra |
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| Rok vydání: | 1992 |
| Předmět: |
Materials science
Silicon Condensed Matter::Other Physics::Instrumentation and Detectors business.industry Photoconductivity Detector chemistry.chemical_element Substrate (electronics) Specific detectivity Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Gallium arsenide Condensed Matter::Materials Science chemistry.chemical_compound Optics chemistry Optoelectronics business Absorption (electromagnetic radiation) Quantum well |
| Zdroj: | Infrared Detectors: State of the Art. |
| ISSN: | 0277-786X |
| Popis: | Nominally identical multiple-quantum-well detectors have been fabricated on GaAs and Si substrates, and the performance of these detectors has been compared at a temperature of 77 K and a wavelength of 10.2 micrometers . The two different substrates yield practically identical absorption characteristics, but the detector on the GaAs substrate has an approximately 60% higher specific detectivity because of its higher photoconductive gain and lower dark-current density. |
| Databáze: | OpenAIRE |
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