Effect of annealing atmosphere on the structure and luminescence of Sn-implanted SiO2 layers

Autor:	João Marcelo Jordão Lopes, Paulo Fernando Papaleo Fichtner, Adriana M. Condó, Francisco C. Lovey, F.C. Zawislak
Rok vydání:	2005
Předmět:	Photoluminescence Ion implantation Materials science Physics and Astronomy (miscellaneous) Transmission electron microscopy Annealing (metallurgy) Analytical chemistry Mineralogy Nanoparticle Thin film Luminescence Nanoclusters
Zdroj:	Applied Physics Letters. 86:023101
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1849855
Popis:	Sn nanoclusters are synthesized in 180 nm SiO2 layers after ion implantation and heat treatment. Annealings in N2 ambient at high temperatures (T⩾700°C) lead to the formation of Sn nanoclusters of different sizes in metallic and in oxidized phases. High-resolution transmission electron microscopy (TEM) analyses revealed that the formed larger nanoparticles are composed by a Sn metallic core and a SnOx shell. The corresponding blue-violet photoluminescence (PL) presents low intensity. However, for heat treatments in vacuum, the PL intensity is increased by a factor of 5 and the TEM data show a homogeneous size distribution of Sn nanoclusters. The low intensity of PL for the N2 annealed samples is associated with Sn oxidation.
Databáze:	OpenAIRE
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