Investigation of Random Telegraph Noise Under Different Programmed Cell Vt Levels in Charge Trap Based 3D NAND Flash

Autor:	Xinlei Jia, Lei Jin, Wen Zhou, Jianwei Lu, Salvatore M. Amoroso, Andrew R. Brown, Ko-Hsin Lee, Plamen Asenov, Xi-Wei Lin, Hongtao Liu, An Zhang, Zongliang Huo
Rok vydání:	2022
Předmět:	Electrical and Electronic Engineering Electronic Optical and Magnetic Materials
Zdroj:	IEEE Electron Device Letters. 43:878-881
ISSN:	1558-0563 0741-3106
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d8ebe046cc1b052e98fa45400ff2258e https://doi.org/10.1109/led.2022.3171176 Zobrazit plný text záznamu