Improved resistive switching characteristics of a multi-stacked HfO2/Al2O3/HfO2 RRAM structure for neuromorphic and synaptic applications: experimental and computational study
| Autor: | Ejaz Ahmad Khera, Chandreswar Mahata, Muhammad Imran, Niaz Ahmad Niaz, Fayyaz Hussain, R. M. Arif Khalil, Umbreen Rasheed, null SungjunKim |
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| Rok vydání: | 2022 |
| Předmět: | |
| Zdroj: | RSC Advances. 12:11649-11656 |
| ISSN: | 2046-2069 |
| DOI: | 10.1039/d1ra08103a |
| Popis: | Atomic Layer Deposition (ALD) was used for a tri-layer structure (HfO2/Al2O3/HfO2) at low temperature over an Indium Tin Oxide (ITO) transparent electrode. |
| Databáze: | OpenAIRE |
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