Diamond FET using high-quality polycrystalline diamond with f/sub T/ of 45 GHz and f/sub max/ of 120 GHz
| Autor: | Toshiki Makimoto, Makoto Kasu, M. Schwitters, S.E. Coe, Yoshiharu Yamauchi, D. J. Twitchen, Kenji Ueda, G. A. Scarsbrook |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Materials science
business.industry Transconductance Direct current Electrical engineering Analytical chemistry Diamond Substrate (electronics) Chemical vapor deposition engineering.material Electronic Optical and Magnetic Materials engineering Field-effect transistor Crystallite Electrical and Electronic Engineering business Current density |
| Zdroj: | IEEE Electron Device Letters. 27:570-572 |
| ISSN: | 0741-3106 |
| DOI: | 10.1109/led.2006.876325 |
| Popis: | Using high-quality polycrystalline chemical-vapor-deposited diamond films with large grains (/spl sim/100 /spl mu/m), field effect transistors (FETs) with gate lengths of 0.1 /spl mu/m were fabricated. From the RF characteristics, the maximum transition frequency f/sub T/ and the maximum frequency of oscillation f/sub max/ were /spl sim/ 45 and /spl sim/ 120 GHz, respectively. The f/sub T/ and f/sub max/ values are much higher than the highest values for single-crystalline diamond FETs. The dc characteristics of the FET showed a drain-current density I/sub DS/ of 550 mA/mm at gate-source voltage V/sub GS/ of -3.5 V and a maximum transconductance g/sub m/ of 143 mS/mm at drain voltage V/sub DS/ of -8 V. These results indicate that the high-quality polycrystalline diamond film, whose maximum size is 4 in at present, is a most promising substrate for diamond electronic devices. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|