Electrical properties of GaP on Si grown by metalorganic chemical vapor deposition

Autor:	Takanori Suzuki, Tetsuo Soga, Z.K. Jiang, Masayoshi Umeno, Masayoshi Mori, Takashi Jimbo
Rok vydání:	1993
Předmět:	business.industry Chemistry Semiconductor materials Schottky diode Mineralogy Chemical vapor deposition Condensed Matter Physics Smooth surface Inorganic Chemistry Charge-carrier density Materials Chemistry Optoelectronics Gap buffer business Layer (electronics) Group 2 organometallic chemistry
Zdroj:	Journal of Crystal Growth. 132:414-418
ISSN:	0022-0248
Popis:	The technique for growing a GaP layer with both a smooth surface and a low carrier concentration is described. It is reported that a very high V/III ratio is necessary to grow a GaP layer on Si with a flat and smooth surface, but from the characteristics of GaP Schottky diodes, a low V/III ratio is necessary for growing a GaP with less defects. So the growth of GaP at low V/III ratio by using a GaP buffer layer grown at high V/III ratio is found to be a suitable technique to obtain device-quality GaP on Si.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d8d3cdf068ef54a33677042bfefc6414 https://doi.org/10.1016/0022-0248(93)90066-6 Zobrazit plný text záznamu