Interface Analysis of P-Type 4H-SiC/Al2O3 Using Synchrotron-Based XPS
| Autor: | Muhammad Usman, Ghadami Milad Yazdi, Sethu Saveda Suvanam, Mats Götelid, Anders Hallén |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Interface (Java) Mechanical Engineering Analytical chemistry 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Synchrotron 0104 chemical sciences law.invention Band bending X-ray photoelectron spectroscopy Mechanics of Materials Test structure law General Materials Science 0210 nano-technology Interface analysis |
| Zdroj: | Materials Science Forum. 858:693-696 |
| ISSN: | 1662-9752 |
| DOI: | 10.4028/www.scientific.net/msf.858.693 |
| Popis: | In this paper, the interface between Al2O3 and p-type 4H-SiC is evaluated using x-ray photoelectron spectroscopy (XPS) measurements. These studies are made on dielectric-semiconductor test structures with Al2O3 as dielectric with different pre-and post-deposition treatments. XPS measurements on the as-deposited samples with two different pre-surface cleaning have shown no formation of a SiO2 interlayer. However, after the post deposition rapid thermal annealing (RTA) at 1100 °C in N2O for 60s, a SiO2 interlayer is formed. The surface band bending was determined from Si 2p core level peak shifts measured using XPS. These results suggest that Al2O3 deposited on the p-type 4H-SiC have a net positive oxide charge which is complementary to that of n-type 4H-SiC. From these shifts it was found that the as-deposited RCA cleaned sample had an oxide charge of 5.6×1013 q/cm-2, as compared to standard cleaned samples, having 4.6×1013 q/cm-2. A further reduction in oxide charge was observed after annealing at 1100 °C in N2O, down to a value of 4×1013 q/cm-2. |
| Databáze: | OpenAIRE |
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