Surface passivation of GaAs MESFETs
| Autor: | Ishwara B. Bhat, S. Akram, G.W. Charache, E. W. Maby |
|---|---|
| Rok vydání: | 1997 |
| Předmět: |
Materials science
Passivation business.industry Analytical chemistry Chemical vapor deposition Electronic Optical and Magnetic Materials law.invention Gallium arsenide Capacitor chemistry.chemical_compound chemistry law Plasma-enhanced chemical vapor deposition Breakdown voltage Optoelectronics Field-effect transistor MESFET Electrical and Electronic Engineering business |
| Zdroj: | IEEE Transactions on Electron Devices. 44:1837-1842 |
| ISSN: | 0018-9383 |
| DOI: | 10.1109/16.641350 |
| Popis: | The metal semiconductor field effect transistor (MESFET) represents a more realistic test for "passivation" efficacy than conventional capacitor test structures due to its prototypical fabrication process. This paper evaluates Gallium-Arsenide (GaAs) surface passivation films utilizing the MESFET as a test vehicle. For this study, gate-to-drain leakage current, gate-to-drain breakdown voltage, complex impedance versus frequency, and low-frequency noise measurements are performed on MESFETs with various passivation films. The results indicate that a hydrogen plasma used to "pre-clean" the GaAs surface in conjunction with an in situ plasma-enhanced chemical vapor deposition (PECVD) Si/sub 3/N/sub 4/ passivation film yields the best performance. In contrast, atomic-layer-epitaxial ZnSe demonstrated inferior performance (even in comparison to PECVD Si/sub 3/N/sub 4/ passivation films that did not receive a hydrogen "pre-clean"). |
| Databáze: | OpenAIRE |
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