Suppression of Dispersive Effects in AlGaN/GaN High-Electron-Mobility Transistors Using Bilayer SiN x Grown by Low Pressure Chemical Vapor Deposition
| Autor: | Olle Axelsson, Anna Malmros, Niklas Rorsman, Johan Bergsten, Mattias Thorsell, Sebastian Gustafsson, Tongde Huang |
|---|---|
| Rok vydání: | 2015 |
| Předmět: |
Materials science
Passivation business.industry Bilayer Transistor Load pull Gallium nitride Chemical vapor deposition Electronic Optical and Magnetic Materials law.invention chemistry.chemical_compound chemistry Plasma-enhanced chemical vapor deposition law Electronic engineering Optoelectronics Metalorganic vapour phase epitaxy Electrical and Electronic Engineering business |
| Zdroj: | IEEE Electron Device Letters. 36:537-539 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/led.2015.2427294 |
| Popis: | A bilayer SiN x passivation scheme has been developed using low pressure chemical vapor deposition (LPCVD), which effectively suppresses the dispersive effects in AlGaN/GaN high-electron-mobility transistors (HEMTs) for microwave power operation. The bilayer LPCVD passivation is compared with in-situ SiN x passivations by metal-organic chemical vapor deposition (MOCVD) and ex-situ SiN x passivations by plasma-enhanced chemical vapor deposition (PECVD). The HEMTs were fabricated and characterized in terms of pulsed IV, transient drain current, and load pull. The devices passivated with in-situ MOCVD SiN x or PECVD SiN x exhibit significant current slump ( $\sim 40$ % and knee-voltage walkout, while the bilayer LPCVD SiN x passivated device shows negligible current slump ( $\sim 6$ % and knee-voltage walkout. These characteristics are directly reflected in the large signal operation, where HEMTs with bilayer LPCVD SiN x have the lowest dynamic ON-state resistance and highest output power (5.4 W/mm at 3 GHz). |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|