Powerful Gallium Nitride Microwave Transistors on Silicon Substrates
| Autor: | I. A. Chernykh, Yu. V. Khrapovitskaya, M. L. Zanaveskin, I. O. Mayboroda, A. N. Tsotsorin, P. A. Perminov, I. S. Ezubchenko, I. V. Semeykin, M. I. Chernykh, Yu. V. Grishchenko, A. A. Andreev, M. Y. Chernykh |
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| Rok vydání: | 2020 |
| Předmět: |
Materials science
Silicon chemistry.chemical_element Gallium nitride 02 engineering and technology Pulsed power 010402 general chemistry Epitaxy 01 natural sciences law.invention chemistry.chemical_compound law General Materials Science Group 2 organometallic chemistry business.industry Transistor General Engineering Heterojunction 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences chemistry Optoelectronics 0210 nano-technology business Voltage |
| Zdroj: | Nanotechnologies in Russia. 15:169-174 |
| ISSN: | 1995-0799 1995-0780 |
| DOI: | 10.1134/s1995078020020123 |
| Popis: | Gallium nitride heterostructures on silicon substrates were grown by the method of gas-phase epitaxy from organometallic compounds. Based on them, transistors with a total gate width of 7.92 mm were created. The influence of the architecture of buffer layers on the characteristics of heterostructures and test transistors based on them is studied. Powerful transistors were obtained with an output pulse power of 45 W at a frequency of 1 GHz with a supply voltage of 28 V. The maximum efficiency of the transistor was 55%. |
| Databáze: | OpenAIRE |
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