Electron conduction of microcracks in dielectrics
| Autor: | Vladimir M. Maslovsky, Jury O. Lichmanov |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Conduction electron
Materials science Silicon Condensed matter physics Metals and Alloys chemistry.chemical_element Surfaces and Interfaces Dielectric Electron transport chain Surfaces Coatings and Films Electronic Optical and Magnetic Materials Surface conductivity chemistry V curve Materials Chemistry Density of states |
| Zdroj: | Thin Solid Films. 257:134-136 |
| ISSN: | 0040-6090 |
| Popis: | The current-voltage characteristics of a defect metal-oxide-semiconductor, (MOS) structure (e.g. after breakdown) can be explained by electron transport through localized states formed by broken bonds. The density of states decreases exponentially below the mobility threshold. Comparing the experimental I– V curve with the theoretical power dependence, a good agreement is found between the microcrack length (about 0.1-0.3 μm) and the microdefect size in the silicon subsurface region. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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