Formation and evolution of nanostructures on semiconductor surfaces in the process of laser-induced inelastic deformation

Autor: G. S. Plotnikov, Vladimir I Emel'yanov, V. B. Zaitsev
Rok vydání: 2008
Předmět:
Zdroj: Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 2:392-398
ISSN: 1819-7094
1027-4510
DOI: 10.1134/s1027451008030129
Popis: A hierarchy of formed Ge surface relief nanostructures, including a disordered nanocluster structure, a two-dimensional lattice, and a one-dimensional lattice, is observed as the laser irradiation dose is increased. It is described in the framework of the defect deformation mechanism.
Databáze: OpenAIRE