Preparation and properties of MnSi1.7 on Si(001)
| Autor: | S. Schwendler, Meiken Falke, H. Giesler, D. K. Sarkar, Anna Mogilatenko, S. Teichert, H.-J. Hinneberg, G. Beddies |
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| Rok vydání: | 2001 |
| Předmět: |
Materials science
Silicon Analytical chemistry chemistry.chemical_element Substrate (electronics) Island growth Condensed Matter Physics Rutherford backscattering spectrometry Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Tetragonal crystal system Crystallography chemistry X-ray crystallography Texture (crystalline) Electrical and Electronic Engineering Thin film |
| Zdroj: | Microelectronic Engineering. 55:227-232 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/s0167-9317(00)00452-4 |
| Popis: | The most rich silicon silicides of manganese, the group of higher manganese silicides (HMS), have the composition MnSix with x in the range from 1.67 to 1.75. This material group with a tetragonal crystal structure shows semiconducting electronic properties, with promising application in thermoelectric devices. This paper reports the structural and morphological properties of HMS prepared by a reactive deposition process on Si(001) under UHV conditions. X-ray diffraction shows, for all samples grown at substrate temperatures ranging from 400 to 750°C, the growth of HMS only. Scanning electron microscopy and Rutherford backscattering spectrometry show a transition from film growth to island growth with increasing substrate temperature. A detailed analysis of the XRD spectra shows a change of the texture of HMS at the transition of the sample morphology. The results are discussed on the basis of anisotropic growth rates for differently oriented grains of HMS. |
| Databáze: | OpenAIRE |
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