| Autor: |
Laura L. Kosbar, R. Fabian W. Pease, Curtis W. Frank |
| Rok vydání: |
1990 |
| Předmět: |
|
| Zdroj: |
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 8:1441 |
| ISSN: |
0734-211X |
| DOI: |
10.1116/1.585094 |
| Popis: |
We have used Langmuir–Blodgett (LB) techniques to prepare very thin (≤1000 A), uniform organic films, and we have investigated their potential use in lithographic applications. Resist films were prepared using novolac and poly (p‐hydroxystyrene) resins and both near and deep UV sensitive photoactive compounds (PAC). LB resist films formed from mixtures of polymer and PAC behaved lithographically in a similar fashion to spin cast films. LB films as thin as 300 A were sufficient to protect 500 A of chromium during wet chemical etching. As few as three monolayers of PAC deposited on the top surface of a spin cast novolac film was sufficient to protect up to ∼1 μm of film from dissolving. Investigation of the ‘‘sphere of influence’’ of PAC molecules by controlling their distribution throughout the film indicates that strong interactions may exist between consecutive LB layers of PAC. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
