Technology assessment for the implementation of magnetoresistive elements with semiconductor components in magnetic random access memory (MRAM) architectures
| Autor: | H. Boeve, L.V. Melo, C. Bruynseraede, Kristof Dessein, Gustaaf Borghs, R. C. Sousa, J. De Boeck, Jo Das, Paulo P. Freitas |
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| Rok vydání: | 1999 |
| Předmět: |
Magnetoresistive random-access memory
Random access memory Hardware_MEMORYSTRUCTURES Magnetoresistance Computer science Spin valve Magnetic storage Magnetic semiconductor Semiconductor device Technology assessment Signal Electronic Optical and Magnetic Materials law.invention Nuclear magnetic resonance Hardware_GENERAL law Electronic engineering Electronics Electrical and Electronic Engineering |
| Zdroj: | IEEE Transactions on Magnetics. 35:2820-2825 |
| ISSN: | 0018-9464 |
| DOI: | 10.1109/20.800992 |
| Popis: | We describe the DRAM-like approach towards a non-volatile magnetoresistive memory integrating magnetic and semiconductor devices into one cell. The speed at which the magnetic memory signal can be read depends on many factors. An important factor is the magnetic element itself, the size, magnetic characteristics and absolute resistance. Secondly, the design of the read-out electronics is a key issue. A third determining factor is the technology in which the electronics are fabricated. Some features are indicated that are essential in optimizing MRAM in future. |
| Databáze: | OpenAIRE |
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