Two-dimensional hydrogen chemical-state analysis by a scanning electron-stimulated desorption ion microscope

Autor:	Keiko Ogai, Kazuyuki Ueda
Rok vydání:	2000
Předmět:	Hydrogen Silicon Scanning electron microscope Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Hydrogen atom Condensed Matter Physics Surfaces Coatings and Films Ion Chemical state chemistry Desorption Materials Chemistry Field ion microscope
Zdroj:	Surface Science. 462:1-5
ISSN:	0039-6028
DOI:	10.1016/s0039-6028(00)00611-7
Popis:	Mass and kinetic-energy differences of desorbed ions are separated simultaneously for the first time in a time-of-flight (TOF) spectrum for electron-stimulated desorption (ESD) spectroscopy. Taking into account the difference in the kinetic energy for the same ion species, the TOF-ESD measures different chemical-bonding states from adsorbed hydrogen. Thus the hydrogen chemical state has been analyzed using scanning ESD ion microscopy (SESDIM) on modified line-and-space composites of silicon and SiO2. In this report, two kinds of two-dimensional hydrogen map, corresponding to silicon lines and SiO2 lines, are obtained at a spatial resolution of less than 1 μm.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d8541d884c3150774f2e599c11a7680a https://doi.org/10.1016/s0039-6028(00)00611-7 Zobrazit plný text záznamu Full Text from ScienceDirect