Angle dependent localized surface plasmon resonance from near surface implanted silver nanoparticles in SiO2 thin film
| Autor: | Puspendu Guha, D. Topwal, G. Vijaya Prakash, D. P. Mahapatra, Harsh Gupta, P. C. Srivastava, S. Ghosh, R. K. Bommali |
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| Rok vydání: | 2018 |
| Předmět: |
Surface diffusion
Materials science Ion beam General Physics and Astronomy Nanoparticle 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Molecular physics Silver nanoparticle 010309 optics Condensed Matter::Materials Science Ion implantation Transmission electron microscopy 0103 physical sciences Thin film Surface plasmon resonance 0210 nano-technology |
| Zdroj: | Journal of Applied Physics. 124:063107 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.5043386 |
| Popis: | Near surface silver nanoparticles embedded in silicon oxide were obtained by 40 keV silver negative ion implantation without the requirement of an annealing step. Ion beam induced local heating within the film leads to an exodiffusion of the silver ions towards the film surface, resulting in the protrusion of larger nanoparticles. Cross-sectional transmission electron microscopy reveals the presence of poly-disperse nanoparticles (NPs), ranging between 2 nm and 20 nm, at different depths of the SiO2 film. The normal incidence reflectance spectrum shows a double kink feature in the vicinity of 400 nm, indicating a strong localized surface plasmon resonance (LSPR) from the embedded NPs. However, due to overlap of the bilayer interference and LSPR, the related features are difficult to separate. The ambiguity in associating the correct kink with the LSPR related absorption is cleared with the use of transfer matrix simulations in combination with an effective medium approximation. The simulations are further verified with angle dependent reflectance measurements. Additionally, transfer matrix simulation is also used to calculate the electric field intensity profile through the depth of the film, wherein an enhanced electric field intensity is predicted at the surface of the implanted films. |
| Databáze: | OpenAIRE |
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