High efficiency GaN LEDs with submicron-scale 2Dperiodic structures directly fabricated by laser interference ablation
| Autor: | Yuanyuan Chen, Xiaohan Sun, Dajun Yuan, Deli Wang, Muchuan Yang |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
medicine.medical_treatment 02 engineering and technology 01 natural sciences Fluence law.invention Optics Interference (communication) law 0103 physical sciences medicine Hexagonal lattice Electrical and Electronic Engineering Diode 010302 applied physics business.industry Radius 021001 nanoscience & nanotechnology Ablation Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Laser interference Optoelectronics 0210 nano-technology business Light-emitting diode |
| Zdroj: | Optics & Laser Technology. 90:211-215 |
| ISSN: | 0030-3992 |
| DOI: | 10.1016/j.optlastec.2016.08.019 |
| Popis: | We report the investigation of directly ablating submicron-scale 2D periodic structure method on the p-layer of blue GaN light-emitting diode (LED) by laser interference. Hexagonal lattice structures on the p-layer surface of GaN LED are fabricated by three beam laser interference and the air hole radius can be changed by adjusting the laser fluence. The structure with a period of 400 nm, hole radius of 180 nm, and depth of 78 nm is patterned with the laser fluence of 215 mJ/cm 2 . Experimental results coincide well with the simulation, and reveal that the patterned LED get a maximum enhancement of 55.7% in light output power compared to flat LED. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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