Collective Electron Tunneling Model in Si-Nano Dot Floating Gate MOS Structure
| Autor: | Yoko Sakurai, Seiichi Miyazaki, Kenji Shiraishi, Masakazu Muraguchi, Katsunori Makihara, Yukihiro Takada, Mitsuhisa Ikeda, Shintaro Nomura, Yasuteru Shigeta, Tetsuo Endoh |
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| Rok vydání: | 2011 |
| Předmět: |
Physics
Mos capacitor Condensed matter physics Mechanical Engineering Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Mechanics of Materials Quantum dot Electron injection Nano Hardware_INTEGRATEDCIRCUITS General Materials Science Hardware_ARITHMETICANDLOGICSTRUCTURES Fermi gas Quantum tunnelling Energy (signal processing) Hardware_LOGICDESIGN Voltage |
| Zdroj: | Key Engineering Materials. 470:48-53 |
| ISSN: | 1662-9795 |
| DOI: | 10.4028/www.scientific.net/kem.470.48 |
| Popis: | We study the sweep speed dependence of electron injection voltage in Si-Nano-Dots (Si-NDs) floating gate MOS Capacitor by using our collective tunneling model, which models the tunneling between two-dimensional electron gas (2DEG) and the Si-NDs. We clarify the sweep speed dependence of electron injection energy with a numerical calculation based on our collective tunneling model, that we developed to emulate the experiment in this system, and obtained a new insight into the origin of sweep speed dependence. We revealed that our model can reproduce the sweep speed dependence of electron tunneling. This insight is useful for designing future nano-electronic devices. |
| Databáze: | OpenAIRE |
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