Molecular beam epitaxy for high‐efficiency nitride optoelectronics

Autor:	Jennifer Mary Barnes, C. Zellweger, Valerie Bousquet, S. E. Hooper, Jon Heffernan, Matthias Kauer, J. Windle
Rok vydání:	2006
Předmět:	Threshold current Materials science business.industry Nitride Condensed Matter Physics Laser law.invention Threshold voltage Ridge waveguide lasers law Optoelectronics Quantum well laser business Diode Molecular beam epitaxy
Zdroj:	physica status solidi c. 3:1379-1382
ISSN:	1610-1642 1862-6351
Popis:	We review the significant progress made in the development of nitride laser diodes by molecular beam epitaxy (MBE). We report on our recent result of room temperature continuous-wave operation of InGaN quantum well laser diodes grown by MBE. Ridge waveguide lasers fabricated on freestanding GaN substrates have a continuous-wave threshold current of 125 mA, corresponding to a threshold current density of 5.7 kA cm–2. The lasers have a threshold voltage of 8.6 V and a lifetime of several minutes. We outline the further technical challenges associated with demonstrating lifetimes of several thousand hours and present an assessment of the potential of MBE as a growth method for commercial quality nitride optoelectronic devices. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d83dcb5c95ee80c7d3f1759a0020d997 https://doi.org/10.1002/pssc.200565302 Zobrazit plný text záznamu Plný text