Photo-injected carrier distributions in metal-semiconductor-metal photodetectors imaged by photoluminescence microscopy
| Autor: | Stephen G. Bishop, Ilesanmi Adesida, Q. Xu, S. Q. Gu, W. Wohlmuth, E. E. Reuter |
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| Rok vydání: | 1994 |
| Předmět: |
Materials science
Photoluminescence business.industry Schottky diode Photodetector Biasing Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Photodiode law.invention Optics Depletion region law Electric field Electrode Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | IEEE Photonics Technology Letters. 6:966-970 |
| ISSN: | 1941-0174 1041-1135 |
| DOI: | 10.1109/68.313066 |
| Popis: | The effects of size and transparency of fingers on the spatial distribution of radiative recombination of photoinjected carriers in metal-semiconductor-metal photodiodes have been investigated using photoluminescence microscopy. Investigations of detectors having fingers and spaces of 20 /spl mu/m showed a depletion region width which varies with bias voltage in a quasi-one-dimensional Schottky diode functional form. Regions of non-uniform electric field were observed in the corners of titanium-gold electrode devices and underneath indium-tin-oxide electrodes. Photodiodes with 3 /spl mu/m wide fingers were found to have a depletion region which did not behave in a quasi-one-dimensional manner. > |
| Databáze: | OpenAIRE |
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