The electrical properties and device applications of homoepitaxial and polycrystalline diamond films

Autor: G.S. Gildenblat, S.A. Grot, Andrzej Badzian
Rok vydání: 1991
Předmět:
Zdroj: Proceedings of the IEEE. 79:647-668
ISSN: 0018-9219
DOI: 10.1109/5.90130
Popis: Electronic applications of semiconductor diamonds are addressed. Doping and electrical properties of these films, formation of low-resistive 'ohmic' contacts, surface modification methods, and experimental device applications are discussed. Of particular interest are high-temperature (300 degrees C) MOSFETs and metal contacts to CVD (chemical vapor deposition) diamond films which were used to fabricate high-temperature (580 degrees C) Schottky diodes, rudimentary MESFETs, and blue light-emitting diodes (LEDs). The status of the emerging technology is reviewed with an emphasis on the areas of current research activity. >
Databáze: OpenAIRE