A Low Temperature, Solution-Processed Poly(4-vinylphenol), YOx Nanoparticle Composite/Polysilazane Bi-Layer Gate Insulator for ZnO Thin Film Transistor
| Autor: | Chan-mo Kang, Kyu-Ha Baek, Changhee Lee, Lee-Mi Do, Hyoung Jin Choi, Man-Young Park, Hyunsik Chae, Hyun-Gwan Kim, Hyeonwoo Shin |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Composite number Biomedical Engineering Oxide Nanoparticle Bioengineering 02 engineering and technology 010402 general chemistry 01 natural sciences Metal Polysilazane chemistry.chemical_compound Poly-4-vinylphenol General Materials Science business.industry General Chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Flexible electronics 0104 chemical sciences chemistry Thin-film transistor visual_art visual_art.visual_art_medium Optoelectronics 0210 nano-technology business |
| Zdroj: | Journal of Nanoscience and Nanotechnology. 16:2632-2636 |
| ISSN: | 1533-4899 1533-4880 |
| DOI: | 10.1166/jnn.2016.11080 |
| Popis: | Low temperature, solution-processed metal oxide thin film transistors (MEOTFTs) have been widely investigated for application in low-cost, transparent, and flexible electronics. To enlarge the application area, solution-processed gate insulators (GI) have been investigated in recent years. We investigated the effects of the organic/inorganic bi-layer GI to ZnO thin film transistors (TFTs). PVP, YO(x) nanoparticle composite, and polysilazane bi-layer showed low leakage current (-10(-8) A/cm2 in 2 MV), which are applicable in low temperature processed MEOTFTs. Polysilazane was used as an interlayer between ZnO and PVP, YO(x) nanoparticle composite as a good charge transport interface with ZnO. By applying the PVP, YO(x), nanoparticle composite/polysilazane bi-layer structure to ZnO TFTs, we successfully suppressed the off current (I(off)) to -10(-11) and fabricated good MEOTFTs in 180 degrees C. |
| Databáze: | OpenAIRE |
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