Study of Characteristics of HEMT-Transistors Based on AlGaN/GaN Heterostructure

Autor:	Boris I. Seleznev, Dmitry G. Fedorov, Andrei V. Zhelannov
Rok vydání:	2020
Předmět:	Materials science business.industry Schottky barrier Transistor Algan gan Heterojunction Gallium nitride High-electron-mobility transistor law.invention chemistry.chemical_compound chemistry law Optoelectronics business Ohmic contact
Zdroj:	Nano Hybrids and Composites. 28:149-154
ISSN:	2297-3400
DOI:	10.4028/www.scientific.net/nhc.28.149
Popis:	The paper presents the route of manufacturing transistors on gallium nitride. As a result of the work done, prototypes of transistor crystals with a gate length and width of 0.5 μm and 0.8 mm, respectively. The basic static characteristics are presented.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::d811d9f566116623a01ae0f3508eaee4 https://doi.org/10.4028/www.scientific.net/nhc.28.149 Zobrazit plný text záznamu