Fabrication and electromechanical characterization of silicon on insulator based electrostatic micro-scanners
| Autor: | Dong Yan, Alyssa Apsel, Amit Lal |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Fabrication
Cantilever Materials science business.industry Dynamic range Silicon on insulator Substrate (electronics) Structural engineering Condensed Matter Physics Atomic and Molecular Physics and Optics Finite element method Mechanics of Materials Signal Processing Optoelectronics General Materials Science Electrical and Electronic Engineering business Civil and Structural Engineering Voltage Electronic circuit |
| Zdroj: | Smart Materials and Structures. 14:775-784 |
| ISSN: | 1361-665X 0964-1726 |
| Popis: | In this paper, a silicon on insulator based electrostatic micro-scanner with extremely low pull-in voltage and fast switching time is proposed. Two symmetric mirror plates are suspended by a cross suspension lever anchored on the substrate. A buried silicon dioxide (BOX) layer underneath the anchors separates the two actuation electrodes. The symmetric design can not only provide better balance of the mirror plates than cantilever design but also increase the dynamic range by scanning in two directions. The structural parameters of the micro-scanner are optimized for a combination of dynamic performance and actuation voltage according to finite element analysis (FEA). Squeeze film damping effects are addressed by a comparison of the theoretical analysis using FEA with experimental results. The testing results show that the pull-in voltage of the micro-scanner is as low as 2.7 V, making it compatible with off-the-shelf control logic circuits. The demonstrated tilt angle is approximately 0.5° and may be increased by adjusting the thickness of the pre-specified BOX layer. |
| Databáze: | OpenAIRE |
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