Parallel boron nitride nanoribbons and etch tracks formed through catalytic etching
| Autor: | Mathias J. Boland, Armin Ansary, Douglas R. Strachan, Mohsen Nasseri |
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| Rok vydání: | 2018 |
| Předmět: |
Materials science
Hexagonal boron nitride 02 engineering and technology 010402 general chemistry 01 natural sciences law.invention Catalysis Crystal chemistry.chemical_compound law General Materials Science Electrical and Electronic Engineering Nanoscopic scale Catalytic hydrogenation Graphene business.industry 021001 nanoscience & nanotechnology Condensed Matter Physics Atomic and Molecular Physics and Optics 0104 chemical sciences chemistry Boron nitride Sapphire Optoelectronics 0210 nano-technology business |
| Zdroj: | Nano Research. 11:4874-4882 |
| ISSN: | 1998-0000 1998-0124 |
| DOI: | 10.1007/s12274-018-2076-y |
| Popis: | One-dimensional (1D) catalytic etching was investigated in few-layer hexagonal boron nitride (hBN) films. Etching of hBN was shown to share a number of similarities with that of graphitic films. As in graphitic films, etch tracks in hBN commenced at film edges and occurred predominantly along certain crystal directions of its lattice, though it was shown that the tracks were generally narrower than those of few-layer graphene under similar processing conditions. It was also shown that catalytic hydrogenation can occur completely through a few-layer hBN film, demonstrating that this process can be used in the formation of isolated low-dimensional nanoscale structures from other layered 2D materials beyond graphene. This ability for thin hBN films to be etched completely through allowed for a crystalline substrate to guide the etching process, which was demonstrated with the successful etch track formation of few-layer hBN on single-crystalline sapphire substrates. The substrate-guided etching resulted in parallel few-layer hBN nanoribbons having an average width of 32 nm and spacing of 13 nm. |
| Databáze: | OpenAIRE |
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