A new method of analysis of DLTS-spectra
| Autor: | R. Langfeld |
|---|---|
| Rok vydání: | 1987 |
| Předmět: |
Physics and Astronomy (miscellaneous)
Band gap Chemistry business.industry Schottky barrier General Engineering Analytical chemistry Schottky diode General Chemistry Arrhenius plot Computational physics Trap (computing) Semiconductor Electrical resistivity and conductivity General Materials Science business Diode |
| Zdroj: | Applied Physics A Solids and Surfaces. 44:107-110 |
| ISSN: | 1432-0630 0721-7250 |
| DOI: | 10.1007/bf00626409 |
| Popis: | We propose a new algorithm to obtain the energy and the capture cross section of a deep trap in the band gap of a semiconductor from deep-level transient spectroscopy (DLTS) measurements. This numerical method requires only a single temperature cycle with a fixed rate window for data acquisition. It is capable to resolve DLTS signals with a shoulder, generated by two trap levels. Experiments with Schottky barrier diodes onn-GaAs demonstrate the contribution of a second trap to the EL6 level in GaAs and the superior reliability in cases of non-negligible resistivity of the back-contacts compared to conventional Arrhenius plot method. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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